Détail de la notice
Titre du Document
SiO2 Atomic Layer Deposition Using Tris(dimethylamino)silane and Hydrogen Peroxide Studied by in Situ Transmission FTIR Spectroscopy
Auteur(s)
BURTON B. B. ; KANG S. W. ; RHEE S. W. ; ...
Résumé
The atomic layer deposition (ALD) of silicon dioxide (SiO2) was initially explored using a variety of silicon precursors with H2O as the oxidant. The silicon precursors were (N,N-dimethylamino)trimethylsilane) (CH3)3SiN(CH3)2, vinyltrimethoxysilane CH2=CHSi(OCH3)3, trivinylmethoxysilane (CH2=CH)3SiOCH3, tetrakis(dimethylamino)silane Si(N(CH3)2)4, and tris(dimethylamino)silane (TDMAS) SiH(N(CH3)2)3. TDMAS was determined to be the most effective of these precursors. However, additional studies determined that SiH* surface species from TDMAS were difficult to remove using only H2O. Subsequent studies utilized TDMAS and H2O2 as the oxidant and explored SiO2 ALD in the temperature range of 150-550 °C. The exposures required for the TDMAS and H2O2 surface reactions to reach completion were monitored using in situ FTIR spectroscopy. The FTIR vibrational spectra following the TDMAS exposures showed a loss of absorbance for O-H stretching vibrations and a gain of absorbance for C―Hx and Si-H stretching vibrations. The FTIR vibrational spectra following the H2O2 exposures displayed a loss of absorbance for C―Hx and Si-H stretching vibrations and an increase of absorbance for the O―H stretching vibrations. The SiH* surface species were completely removed only at temperatures >450 °C. The bulk vibration
Editeur
American Chemical Society
Identifiant
ISSN : 1932-7447
Source
Journal of physical chemistry. C A. 2009, vol. 113, n° 19, pp. 8249-8257 [9 pages]
Langue
Anglais
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